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| #3355541 in Books | Springer | 1999-06-30 | Original language:English | PDF # 1 | 9.21 x1.25 x6.14l,2.03 | File type: PDF | 540 pages | ||4 of 33 people found the following review helpful.| Nice reference book on semiconductor tech.|By T.H Lin|Nice reference book on semiconductor tech
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory),...
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